2013-11-21 1 BFR106 low noise silicon bipolar rf transistor ? high linearity low noise rf transistor ? 22 dbm op1db and 31 dbm oip3 @ 900 mhz, 8 v, 70 ma ? for uhf / vhf applications ? driver for multistage amplifiers ? for linear broadband and antenna amplifiers ? collector design supports 5 v supply voltage ? pb-free (rohs compliant) package ? qualification report according to aec-q101 available esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type marking pin configuration package BFR106 r7s 1=b 2=e 3=c sot23 maximum ratings at t a = 25 c, unless otherwise specified parameter symbol value unit collector-emitter voltage, t a = 25c t a = -55c v ceo 16 15 v collector-emitter voltage v ces 20 collector-base voltage v cbo 20 emitter-base voltage v ebo 3 collector current i c 210 ma base current i b 21 total power dissipation 1) t s 76 c p tot 700 mw junction temperature t j 150 c storage temperature t st g -55 ... 150 thermal resistance parameter symbol value unit junction - soldering point 2) r thjs 105 k/w 1 t s is measured on the collector lead at the soldering point to the pcb 2 for calculation of r t hjs please refer to application note an077 (thermal resistance calculation)
2013-11-21 2 BFR106 electrical characteristics at t a = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 15 - - v collector-emitter cutoff current v ce = 20 v, v be = 0 v ce = 10 v, v be = 0 i ces - - - 0.001 1 0.03 a collector-base cutoff current v cb = 10 v, i e = 0 i cbo - 1 30 na emitter-base cutoff current v eb = 2 v, i c = 0 i ebo - 1 30 dc current gain i c = 70 ma, v ce = 8 v, pulse measured h fe 70 100 140 -
2013-11-21 3 BFR106 electrical characteristics at t a = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 70 ma, v ce = 8 v, f = 500 mhz f t 3.5 5 - ghz collector-base capacitance v cb = 10 v, f = 1 mhz, v be = 0 , emitter grounded c cb - 0.85 1.2 pf collector emitter capacitance v ce = 10 v, f = 1 mhz, v be = 0 , base grounded c ce - 0.27 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz, v cb = 0 , collector grounded c eb - 3.9 - minimum noise figure i c = 20 ma, v ce = 8 v, z s = z sopt , f = 900 mhz i c = 20 ma, v ce = 8 v, z s = z sopt , f = 1.8 ghz nf min - - 1.8 3 - - db
2013-11-21 4 BFR106 electrical characteristics at t a = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) power gain, maximum available 1) i c = 70 ma, v ce = 8 v, z s = z sopt , z l = z lopt , f = 900 mhz i c = 70 ma, v ce = 8 v, z s = z sopt , z l = z lopt , f = 1.8 ghz g ma - - 13 8.5 - - db transducer gain i c = 70 ma, v ce = 8 v, z s = z l = 50 ? , f = 900 mhz i c = 70 ma, v ce = 8 v, z s = z l = 50 ? , f = 1.8 ghz | s 21e | 2 - - 10.5 5 - - db third order intercept point at output 2) v ce = 8 v, i c = 70 ma, f = 0.9 ghz , z s =z l =50 ? ip 3 - 31 - dbm 1db compression point i c = 70 ma, v ce = 8 v, z s =z l =50 ? , f = 0.9 ghz p -1db - 22 - 1 g ma = | s 21e / s 12e | (k-(k2-1) 1/2 ) 2 ip 3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.1 mhz to 6 ghz
2013-11-21 5 BFR106 total power dissipation p tot = ? ( t s ) 0 15 30 45 60 75 90 105 120 c 150 t s 0 50 100 150 200 250 300 350 400 450 500 550 600 mw 750 p tot
2013-11-21 6 BFR106 spice gp model for the spice gummel poon (gp) model as well as for the s-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models . please consult our website and download the latest versions before actually starting your design.
2013-11-21 7 BFR106 package sot23
2013-11-21 8 BFR106 edition 2009-11-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
|
